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IEEE-EDS Seminar – Atomistic Quantum Transport Modelling for Emergent 2D Material-based Device by Dr. Youseung Lee

January 27 @ 12:00 pm - 1:00 pm

The zoom meeting details for this event will be sent to registrants one day before the event on the email provided at registration. Abstract: Over the years, most of the manufactured electronic devices started to have at least one dimension in the nanometer scale. Concurrently, the non-equilibrium Green’s function (NEGF) framework has been broadly democratized to investigate quantum transport effects inside those devices. The latter framework has also proven its importance to correctly capture the underlining physics for the nano-scale devices. This talk will then discuss the latest development of atomistic quantum transport modelling for various emerging 2D materials-based devices. The first part of the talk will show an ab-initio approach that correctly captures the scattering mechanisms present in 2D FETs, combining the linearized Boltzmann Transport Equation (LBTE) and the NEGF formalism. Atomistic defect-variability study for 2D monolayer MoS2 FETs via many body defect-level corrections will also be presented. The second part will show the application of the ab-initio modeling framework to simulate Majorana transport, paving the way for topological qubits based on 2D nanoribbons. Atomistic modelling of van der Waals charge qubit manipulations and measurements in 2D materials will also be covered. Speaker(s): Dr. Youseung Lee, Agenda: Over the years, most of the manufactured electronic devices started to have at least one dimension in the nanometer scale. Concurrently, the non-equilibrium Green’s function (NEGF) framework has been broadly democratized to investigate quantum transport effects inside those devices. The latter framework has also proven its importance to correctly capture the underlining physics for the nano-scale devices. This talk will then discuss the latest development of atomistic quantum transport modelling for various emerging 2D materials-based devices. The first part of the talk will show an ab-initio approach that correctly captures the scattering mechanisms present in 2D FETs, combining the linearized Boltzmann Transport Equation (LBTE) and the NEGF formalism. Atomistic defect-variability study for 2D monolayer MoS2 FETs via many body defect-level corrections will also be presented. The second part will show the application of the ab-initio modeling framework to simulate Majorana transport, paving the way for topological qubits based on 2D nanoribbons. Atomistic modelling of van der Waals charge qubit manipulations and measurements in 2D materials will also be covered. Virtual: https://events.vtools.ieee.org/m/342765

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