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Silicon Carbide and Wide-Bandgap Materials MEMS/NEMS: Fundamentals, Progress, and Emerging Applications

October 5 @ 6:30 pm - 8:00 pm

Abstract: Silicon carbide (SiC), an advanced polymorphic material of great technological importance, possesses very attractive characteristics including wide bandgap, transparency from visible to near infrared, large refractive index, excellent thermal conductivity, very high elastic modulus and remarkable mechanical hardness and chemical inertness. These attributes make SiC interesting and promising for a number of emerging and critical applications, ranging from high-temperature electronics to sensors and transducers enabled by micro/nanoelectromechanical systems (MEMS/NEMS), to photonics and quantum information processing. In this talk, I will introduce the fundamentals of NEMS enabled by SiC and other emerging wide-bandgap (WBG) materials, including nanofabrication and signal transduction in these nanodevices. I will then focus on the development of SiC and WBG MEMS/NEMS devices for sensing, signal processing, and computing, especially in harsh or even extreme environments, including in high-temperature and energetic radiation situations. Finally, we shall discuss today’s open challenges, opportunities, and future perspectives of advancing fundamental and engineering studies of integrated micro/nanosystems based on SiC and WBG materials and devices. Speaker(s): Prof. Philip Feng, Agenda: 6:30 – 6:45 PM Zoom Registration & Networking 6:50 – 7:00 PM Announcements & Polling 7:00 – 7:45 PM Invited Talk 7:45 – 8:00 PM Questions & Answers Virtual: https://events.vtools.ieee.org/m/324936

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