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Spin-Transfer-Torque MRAM: The Next Revolution in Memory

October 11 @ 6:30 pm - 8:00 pm PDT

This talk will provide an overview of Spin-Transfer-Torque MRAM from basic physics to today’s latest technology developments.

Hybrid Meeting – Online or In Person at Quadrant

Refreshments will be available at Quadrant prior to the start of the presentation.

Presentation starts at 7:00 PM PT (GMT-7)

Dr. Daniel C. Worledge, Distinguished Staff Researcher at IBM T. J. Watson Research Center, will give an introduction to the basic physics of spin-transfer torque and applications of Spin-Transfer-Torque MRAM. He will review why perpendicular magnetic anisotropy is advantageous for MRAM compared to in-plane anisotropy, and the materials challenges of perpendicular anisotropy. He will discuss the research at IBM in 2009 that led to the discovery of perpendicular anisotropy in thin CoFeB/MgO layers, and the use of these layers to make the first practical perpendicular magnetic tunnel junctions and the first demonstration of reliable writing in Spin-Transfer-Torque MRAM. Finally he will review the recent results on methods to lower the switching current of Spin-Transfer-Torque MRAM by using optimized magnetic materials and double magnetic tunnel junctions, including IBM’s recent demonstration of reliable 250 ps switching.

A Q&A session will follow the lecture.

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